MOSFET 2N-CH 25V 20A 8LSON CSD86330Q3D
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Description:
MOSFET 2N-CH 25V 20A 8LSON
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Parameters
Current at 25 ° C - continuous drain (Id)
Drain source voltage (Vdss)
2 N channels(half-bridge)
Gate charge (Qg) at different Vgs (maximum)
Input capacitance at different Vds (Ciss) (maximum)
On resistance (maximum) for different Ids and Vgs
Vgs (th) (maximum) for different Ids
DataSheet
CSD86330Q3D（FET, MOSFET）ByTIDesign and production, ICQQG Electronic component purchase website provides sufficient inventory26657,Price reference "real-time change" China/Hongkong。 CSD86330Q3D package/specs, Download CSD86330Q3D、Datasheet。
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